If you liked Physico-Chemical Phenomena in Thin Films and at Solid Surfaces by Leonid I. Trakhtenberg, Sheng H. Lin, and Olusegun J. Ilegbusi, start with Thin films and nanostructures (2007), Advances in Multi-Photon Processes and Spectroscopy, Volume 17 (2006), and Basic Transport Phenomena in Materials Engineering (2016). These recommendations are drawn from the same author, shared genres, and reader overlap on BookOrb.

Back to Physico-Chemical Phenomena in Thin Films and at Solid Surfaces · Leonid I. Trakhtenberg books in order

Recommended next reads

  1. 1 Thin films and nanostructures 2007 · 804 pages · Olusegun J. Ilegbusi · Same author
  2. 2 Advances in Multi-Photon Processes and Spectroscopy, Volume 17 2006 · 219 pages · Sheng H. Lin, A. A. Villaeys, Y. Fujimura · Same author
  3. 3 Basic Transport Phenomena in Materials Engineering 2016 · 260 pages · Manabu Iguchi, Olusegun J. Ilegbusi · Same author
  4. 4 Advances in Multi-Photon Processes and Spectroscopy, Volume 15 2003 · 374 pages · Y. Fujimura, Sheng H. Lin, A. A. Villaeys · Same author
  5. 5 Advances in Multi-Photon Processes and Spectroscopy, Volume 16 2004 · 422 pages · Sheng H. Lin, A. A. Villaeys, Y. Fujimura · Same author

Frequently asked questions

What should I read after Physico-Chemical Phenomena in Thin Films and at Solid Surfaces?

BookOrb recommends Thin films and nanostructures (2007), Advances in Multi-Photon Processes and Spectroscopy, Volume 17 (2006), Basic Transport Phenomena in Materials Engineering (2016), Advances in Multi-Photon Processes and Spectroscopy, Volume 15 (2003), and Advances in Multi-Photon Processes and Spectroscopy, Volume 16 (2004).

Are there books like Physico-Chemical Phenomena in Thin Films and at Solid Surfaces?

Yes. The list on this page is ranked from the closest matches BookOrb has for Physico-Chemical Phenomena in Thin Films and at Solid Surfaces.

Who wrote Physico-Chemical Phenomena in Thin Films and at Solid Surfaces?

Physico-Chemical Phenomena in Thin Films and at Solid Surfaces is by Leonid I. Trakhtenberg, Sheng H. Lin, and Olusegun J. Ilegbusi.