Junction transport in epitaxial film silicon heterojunction solar cells

We report our progress toward low-temperature hot wire chemical vapor deposition (HWCVD) epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous silicon (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.