The drift diffusion equation and its applications in MOSFET modeling

The drift diffusion equation and its applications in MOSFET modeling will bridge the gap between phe-nomenological modeling and a rigorous microscopic approach. The five chapters cover: Wigner's and Boltzmann's equation, the relaxation time approximation and the hydro dynamic equations for the case of strong non equilibrium, charge transport in an inversion channel, analytical approaches to determine the high energy distribution of carriers in high electric fields, and the spatial and temporal built up of charges in the gate oxide of a MOSFET device under electrical stress.