Charakterisierung von epitaktisch auf InP abgeschiedenen GaxIn₁-xAs-Schichten (0.45<x<0.49) mittels Photolumineszenz und Doppelkristall - Röntgendiffraktometrie

Name: Charakterisierung von epitaktisch auf InP abgeschiedenen GaxIn₁-xAs-Schichten (0.45<x<0.49) mittels Photolumineszenz und Doppelkristall - Röntgendiffraktometrie
Author: Karl-Heinz Götz

by Karl-Heinz Götz

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103 pages 1984

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Author: Karl-Heinz Götz
First Published: 1984
Pages: 103
Language: EN

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